Electronic Components Datasheet Search English Chinese. 2N3055 datasheet, 2N3055 datasheets, 2N3055 pdf, 2N3055 circuit: MOSPEC - POWER TRANSISTORS(15A,50V,115W),alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Features, Applications: Power dissipation 25☌ DC current gain hFE 4 A VCE( Sat) 1.1 V (Maximum) 400 mA Designed for use general-purpose amplifier and low - frequency switching applications. 2N3055 datasheet, 2N3055 pdf, 2N3055 data sheet, datasheet, data sheet, pdf, Boca Semiconductor Corporation, COMPLEMENTARY SILICON POWER TRANSISTORS. Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) IC = 4 Adc. DC Current Gain − hFE = 20−70 IC = 4 Adc. The device has become particularly popular due to some of its outstanding features, as summarized below:ĢN3055/D 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. The basic application range include power switching, high fidelity amplification, shunt regulation, and forming the output stages of various power circuits.
The 2N3055 is a NPN Epitaxial-Base Planar Transistor that normally comes encapsulated in a metal Jedec TO-3 package.
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